- Texas Instruments (Dallas, TX)
- …including Doherty, LMBA, out-phasing and pulsed amplifier designs + Familiar with RF GaN device physics, including trapping and thermals, and transistor models + ... your talent to work with us. The Senior RF GaN Power Amplifier Design Engineer role is within Kilby...in designing different Power Amplifier classes and configurations + Device small signal model extractions and waveform engineering for… more
- Global Foundries (Essex Junction, VT)
- …wide band gap materials like the III-N material system + Experience with GaN HEMT device characterization (DC, s-parameter, loadpull, pulsed I-V) and ... Including associated electrical test and analysis methods of discrete device structures. + Research experience in GaN ...discrete device structures. + Research experience in GaN e-mode or d-mode HEMT RF High Frequency or… more
- Renesas (Goleta, CA)
- …: 5+ years of experience with a MS, and 3+ years of experience with Ph.D in GaN Device and GaN Device Physics. + Strong familiarity with GaN ... GaN products. Will be responsible for the choice of GaN epitaxial structures, the device dimensions, the chip layout and package considerations to meet cost,… more
- Renesas (Goleta, CA)
- …test campaigns, physics based models of reliability and lifetime. **Responsibilities** + High-voltage GaN device design for cost, performance, and reliability + ... in Electrical Engineering or related fields + Strong familiarity with GaN device physics, layout and characterization + Proficient in data manipulation and… more
- Texas Instruments (Dallas, TX)
- … physics, and reliability. The scope of the job includes, but not limited to: + GaN device simulations (TCAD), device design, layout, lead tape-outs + Novel ... Engineering, Physics, or related degree + 10+ years of hands-on experience in GaN or compound semiconductor device /process development (can include postdoc or… more
- Renesas (Goleta, CA)
- …behavior, GaN heterostructure engineering, and epitaxial integration for p- GaN and e-mode (enhancement-mode) device architectures. The ideal candidate ... transfer MOCVD epitaxial processes for GaN -on-Si and GaN -onSapphire wafers, focusing on high-performance device layers...-on-Si and GaN -onSapphire wafers, focusing on high-performance device layers targeting e-mode (p- GaN gate) and… more
- Global Foundries (Essex Junction, VT)
- …Research and Development Organization is seeking qualified candidates for the role of Power GaN Technology Development Device Leader. The Device Leader is ... expected to bring deep theoretical knowledge and extensive experience in device physics to bear on the challenge of providing customers with competitive device … more
- Renesas (Goleta, CA)
- …+ **Power Converter Topology Analysis and Test System Development** + Analyze GaN device behavior within common power converter circuits. + Translate ... Job Description The Senior Power Electronics Test Engineer helps develop and validate GaN power devices by designing SALT/HTOL test circuits and systems, evaluating … more
- BAE Systems (Nashua, NH)
- …of work experience; or PhD in semiconductor related fields + Working knowledge of GaN -based RF device highly desired + Experience in technical proposal writing + ... processes and optimize these processes for manufacturability. This includes advanced device and process development, new process integration, as well as… more
- Global Foundries (Essex Junction, VT)
- …engineer you will be responsible to design and develop discrete semiconductor GaN Epitaxy processes that that meet the performance, reliability, yield, and cost ... silicon germanium (SiGe), and wide band gap semiconductors (eg GaN , SiC, etc). + Define and optimize III-V superlattices,...etc). + Define and optimize III-V superlattices, buffers, and device layers and requirements as defined in the Technology… more
- Global Foundries (Essex Junction, VT)
- …with the technology development integration and process teams as well as test and device engineers in driving the integration of advanced process modules to be used ... 90nm, and sub 90nm nodes in CMOS, SiGe, and GaN technologies targeting new and improved RF applications. +...science discipline. + A basic knowledge of modern semiconductor device physics and device characterization. + A… more
- RTX Corporation (Andover, MA)
- …world. Job Summary: An exciting opportunity has opened for a **_Senior GaN Reliability Engineer_** to join our Advanced Microelectronic Solutions Department (AMSD) ... applications. Your subject matter technical expertise in reliability testing and characterization, device physics, and applied statistics is key to the success on… more
- Candela Corporation (Marlborough, MA)
- …and Bipolar RF design techniques. * Knowledge of power switching components including MOSFET, GaN or SiC power device and DC/DC converter and inverter design * ... and other system peripherals within complex capital equipment style medical device . * Experienced with designing for multi-processor communications including 1-wire,… more
- Applied Materials (Santa Clara, CA)
- …VCSEL arrays, etc.) for photonic interconnect applications. + Perform device design and modeling (optical/electrical/thermal) using simulation tools such as ... Physics, or related field. + Strong knowledge of optoelectronic device physics and design. + 5+ years of experience...+ 5+ years of experience in compound semiconductor processing ( GaN , GaAs, InP) with emphasis on microLED or VCSEL… more
- Northrop Grumman (Shelbyville, TN)
- …work with teammates to accomplish common goals. Design technologies will include GaAs, GaN , and InP. This position will require an individual who is comfortable with ... multiple roles and responsibilities is required, supporting RF design, device modelling, mechanical design, design for manufacturability, and business development.… more
- Power Device Corp (Bohemia, NY)
- …Critical - Join PDC and make a Difference For more than 50 years, Power Device Corporation (PDC) has been recognized as a world leader in the design and manufacture ... and EMI analysis. + Experience with Power devices Mosfet, IGBT, SiC and GaN . + Familiarity with MIL-STD-1275/704 and DO-160 DC and AC input power specifications,… more
- Toyota (Ann Arbor, MI)
- …speed, RF design, EMI, or analog circuit). + Exposure to semiconductor device characteristics either through practice or coursework. + Demonstrated ability to lead ... principles. + Experience with WBG/UWBG semiconductor devices (eg, SiC, GaN ) and modeling tools. + Basic knowledge of optically...+ Exposure to PIC research and development (eg, simulation, device layout, tape out, fab, test). **What we'll bring**… more
- Power Integrations (Branchburg, NJ)
- …production reactors for high voltage devices. + Develop MOCVD recipe based on device structure & designs. + Troubleshoot MOCVD material growth issues. + Responsible ... activities for ongoing epi wafer. + Interact closely with Device and Foundry Engineering groups to develop novel high...a split week coverage, including partial weekend. + Experience with GaN material growth with Veeco's MOCVD tools is… more
- Advanced Energy (Fort Collins, CO)
- …be based on a school or personal project) + Power electronics design and power device selection: Si MOSFETs, SiC MOSFETS, GaN , LDMOS + RF design expertise ... including Driver/Exciter, Combiner/Splitter, Measurement (V/I Sensor, Coupler), RF layout, filter design, and impedance Matching + DC/DC power supply design - Buck, Boost, Half-Bridge, Full-Bridge, Fly-Back, PFC + Circuit design and simulation with experience… more
- Narda-MITEQ (Hauppauge, NY)
- …noise figure analyzers, spectrum analyzers, power meters and signal generators. + Familiarity with device semiconductors, such as GaAs and GaN . + Ability to gain ... Secret Level Security Clearance. + Strong written and verbal communications skills. Preferred Additional Skills: + Familiarity with MIL specifications, such as MIL-PRF-38534 and MIL-STD-202. + Hands-on experience testing and aligning fine pitch circuits under… more