• Microwave Engineer III

    Belcan (Hudson, NH)
    Microwave Engineer III Job Number: 353077 Category: Materials Engineering Description: Job Title: Microwave Engineer III Location: Hudson, NH Zip ... play a crucial role in the design, development, and implementation of microwave systems and components used in radar, communication, and electronic warfare systems.… more
    Belcan (11/02/24)
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  • Senior Principal Semiconductor Engineer

    BAE Systems (Nashua, NH)
    …your career with BAE Systems. BAE Systems is seeking a Senior Principal Semiconductor Engineer to join the Advanced Microwave Product Center (located in Nashua, ... environment. A strong background in semiconductor process integration as related to III -V materials is highly desired. In-depth knowledge of GaN RF devices and… more
    BAE Systems (10/19/24)
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  • Principal Semiconductor Engineer

    BAE Systems (Nashua, NH)
    …and monitor daily production activities. BAE Systems is seeking a Principal Semiconductor Engineer to join the Advanced Microwave Product Center (located in ... fields and 3 years of work experience + Hands-on experience in III -V semiconductor inBackside processing, new tool install and qualification, and process improvement… more
    BAE Systems (09/20/24)
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  • Electronic-Photonic Process Design Kit (PDK)…

    MIT Lincoln Laboratory (Lexington, MA)
    …with applications in quantum computing, atomic systems, advanced laser sources, microwave photonics, communications, sensing, and other areas of interest to the ... lab system. * Compound Semiconductor Laboratory (CSL): Facilities housing III -V and non-silicon material growth (molecular beam epitaxy (MBE), metalorganic… more
    MIT Lincoln Laboratory (09/14/24)
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  • Integrated Circuit (IC) Layout and Mask Design…

    MIT Lincoln Laboratory (Lexington, MA)
    …with applications in quantum computing, atomic systems, advanced laser sources, microwave photonics, communications, sensing, and other areas of interest to the ... lab system. * Compound Semiconductor Laboratory (CSL): Facilities housing III -V and non-silicon material growth (molecular beam epitaxy (MBE), metalorganic… more
    MIT Lincoln Laboratory (09/12/24)
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  • PA Design Engineer

    Insight Global (Chelmsford, MA)
    …RFIC design and HFSS Detailed transistor-level knowledge of RF and microwave circuit design techniques including linear power amplifier design; high-efficiency power ... and up to 3 years' experience in RFIC layout and tape-out, using III -V HBT, III -V HEMT, Si CMOS, SOI, and/or BiCMOS technologies; circuit and EM simulation in… more
    Insight Global (11/01/24)
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